IRFR024NTRPBF

IRFR024NTRPBF, HEXFET Power MOSFET, DPAK, 55V, 17A, International Rectifier

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Price:: US $0.50~3.50 / piece [Get Latest Price]

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PartNumber:: IRFR024NTRPBF

Brand:: International Rectifier - IR | Pack: DIP | D/C: 12+

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Products Upload time: 2012-07-30

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Product Summary

The IRFR024NTRPBF is a Fifth Generation HEXFET from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFR024NTRPBF is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The IRFR024NTRPBF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Parametrics

IRFR024NTRPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 17A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 12 A; (3)Pulsed Drain Current, IDM: 68A; (4)PD @TC = 25℃ Power Dissipation: 45 W; (5)Linear Derating Factor: 0.30 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Single Pulse Avalanche Energy, EAS: 71 mJ; (8)Avalanche Current, IAR: 10 A; (9)Repetitive Avalanche Energy, EAR: 4.5 mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 5.0 V/ns; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (12)Soldering Temperature, for 10 seconds 300 (1.6mm from case)℃.

Features

IRFR024NTRPBF features: (1)Ultra Low On-Resistance; (2)Surface Mount (IRFR024N); (3)Straight Lead (IRFU024N); (4)Advanced Process Technology; (5)Fast Switching; (6)Fully Avalanche Rated.