Product Summary
The FDD4141 is a P-Channel PowerTrench MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. The applications of the FDD4141 include Inverter, Power Supplies.
Parametrics
FDD4141 absolute maximum ratings: (1)Drain to Source Voltage, VDS: -40 V; (2)Gate to Source Voltage, VGS: ±20 V; (3)Drain Current -Continuous (Package limited) TC = 25℃, ID: -50A; Continuous (Silicon limited) TC = 25℃, ID: -58A; Continuous TA = 25℃, ID: -10.8A; Pulsed: -100A; (4)Single Pulse Avalanche Energy, EAS: 337 mJ; (5)Power Dissipation TC = 25℃, PD: 69W; (6)Power Dissipation TA = 25℃ (Note 1a), PD: 2.4; (7)Operating and Storage Junction Temperature Range, TJ, TSTG: -55 to +150℃.
Features
FDD4141 features: (1)Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A; (2)Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A; (3)High performance trench technology for extremely low rDS(on); (4)RoHS Compliant.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FDD4141 |
Fairchild Semiconductor |
MOSFET -40V P-Channel PowerTrench |
Data Sheet |
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FDD4141_F085 |
Fairchild Semiconductor |
MOSFET Trans MOS P-Ch 40V 10.8A 3-Pin 2+Tab |
Data Sheet |
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