(Hong Kong)
Product Summary
The IRF3808PBF is a HEXFET Power MOSFET. The applications of the IRF3808PBF include Integrated Starter Alternator, 42 Volts Automotive Electrical Systems, Lead-Free.
Parametrics
IRF3808PBF absolute maximum rarings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 140 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 97 A; (3)IDM Pulsed Drain Current: 550 A; (4)PD @TC = 25℃ Power Dissipation: 330 W; (5)Linear Derating Factor: 2.2 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 430 mJ; (8)IAR Avalanche Current: 82 A; (9)EAR Repetitive Avalanche Energy: 14 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 5.5 V/ns; (11)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 175℃; (12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (13)Mounting torque, 6-32 or M3 screw: 10 lbf·in(1.1 N·m).
Features
IRF3808PBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6) Repetitive Avalanche Allowed up to Tjmax.
Diagrams
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 IRF3808PBF |
International Rectifier |
MOSFET MOSFT 75V 140A 7mOhm 150nC |
Data Sheet |
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