IRFZ24NSPBF

IRFZ24NSPBF, HEXFET Power MOSFET, TO-263-3, 55V, 17A, International Rectifier

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.50~3.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.50~3.50

PartNumber:: IRFZ24NSPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 12+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Ella's store

(Hong Kong)

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-07-30

From Other Seller

Part Number:IRFZ24NSPBF
US $0.50 - 3.50
EKXG401ELL6R8MJ16S

US $5.00 - 5.00 / Piece
(0) Remove
ECA1HHG4R7

US $10.00 - 10.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The IRFZ24NSPBF is a Fifth Generation HEXFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFZ24NSPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRFZ24NSPBF is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The device is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Parametrics

IRFZ24NSPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 17A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 12 A; (3)Pulsed Drain Current, IDM: 68A; (4)PD @TA = 25℃, Power Dissipation: 3.8 W; (5)PD @TC = 25℃, Power Dissipation: 45 W; (6)Linear Derating Factor: 0.30 W/℃; (7)Gate-to-Source Voltage, VGS: ±20 V; (8)Single Pulse Avalanche Energy, EAS: 71 mJ; (9)Avalanche Current, IAR: 10 A; (10)Repetitive Avalanche Energy, EAR: 4.5 mJ; (11)Peak Diode Recovery dv/dt, dv/dt: 6.8 V/ns; (12)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to + 175℃; (13)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃.

Features

IRFZ24NSPBF features: (1)Advanced Process Technology; (2)Surface Mount (IRFZ24NS); (3)Low-profile through-hole (IRFZ24NL); (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-Free.