IRFZ24NSPBF

IRFZ24NSPBF, HEXFET Power MOSFET, TO-263-3, 55V, 17A, International Rectifier

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PartNumber:: IRFZ24NSPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 12+

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Products Upload time: 2012-07-30

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Product Summary

The IRFZ24NSPBF is a Fifth Generation HEXFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFZ24NSPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRFZ24NSPBF is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The device is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Parametrics

IRFZ24NSPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 17A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 12 A; (3)Pulsed Drain Current, IDM: 68A; (4)PD @TA = 25℃, Power Dissipation: 3.8 W; (5)PD @TC = 25℃, Power Dissipation: 45 W; (6)Linear Derating Factor: 0.30 W/℃; (7)Gate-to-Source Voltage, VGS: ±20 V; (8)Single Pulse Avalanche Energy, EAS: 71 mJ; (9)Avalanche Current, IAR: 10 A; (10)Repetitive Avalanche Energy, EAR: 4.5 mJ; (11)Peak Diode Recovery dv/dt, dv/dt: 6.8 V/ns; (12)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to + 175℃; (13)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃.

Features

IRFZ24NSPBF features: (1)Advanced Process Technology; (2)Surface Mount (IRFZ24NS); (3)Low-profile through-hole (IRFZ24NL); (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-Free.