Product Summary
The MJE253G is a complementary silicon power plastic transistor. The MJE253G is designed for low power audio amplifier and low-current, high-speed switching applications.
Parametrics
MJE253G absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 100 Vdc; (2)Collector-Base Voltage, VCB: 100 Vdc; (3)Emitter-Base Voltage, VEB: 7.0 Vdc; (4)Collector Current - Continuous, IC: 4.0Adc; -Peak, IC: 8.0Adc; (5)Base Current, IB: 10 Adc; (6)Total Power Dissipation @ TC = 25℃, PD: 15 W; Derate above 25℃, PD: 120 mW/℃; (7)Total Power Dissipation @ TA = 25℃, PD: 1.5 W; Derate above 25℃, PD: 12 mW/℃; (8)Operating and Storage Junction Temperature Range, TJ, Tstg: -65 to +150℃.
Features
MJE253G features: (1)High Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min); (2)High DC Current Gain @ IC = 200 mAdc hFE = 40-200; = 40-120; (3)Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc; (4)High Current Gain Bandwidth Product - fT = 40 MHz (Min) @ IC = 100 mAdc; (5)Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB; (6)Pb-Free Packages are Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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MJE253G |
ON Semiconductor |
Transistors Bipolar (BJT) 4A 100V 15W PNP |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
MJE200 |
ON Semiconductor |
Transistors Bipolar (BJT) 5A 25V 15W NPN |
Data Sheet |
Negotiable |
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MJE200G |
ON Semiconductor |
Transistors Bipolar (BJT) 5A 25V 15W NPN |
Data Sheet |
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MJE200STU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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MJE200TSTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Epitaxial Short Leads |
Data Sheet |
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MJE210 |
ON Semiconductor |
Transistors Bipolar (BJT) 5A 25V 15W PNP |
Data Sheet |
Negotiable |
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MJE210G |
ON Semiconductor |
Transistors Bipolar (BJT) 5A 25V 15W PNP |
Data Sheet |
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