Product Summary

The SPW20N60S5 is a cool MOS power transistor.

Parametrics

SPW20N60S5 absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 20A; TC = 100℃, ID: 13A; (2)Pulsed drain current, tp limited by Tjmax, IDpuls: 40A; (3)Avalanche energy, single pulse, ID = 10A, VDD = 50V, EAS: 690mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax2), ID = 20A, VDD = 50V, EAR: 1mj; (5)Avalanche current, repetitive tAR limited by Tjmax, IAR: 20A; (6)Gate source voltage, VGS: ±20 V; (7)Gate source voltage AC (f >1Hz), VGS: ±30V; (8)Power dissipation, TC = 25℃, Ptot: 208W; (9)Operating and storage temperature, Tj, Tstg: -55 to +150℃.

Features

SPW20N60S5 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance.

Diagrams

SPW20N60S5 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
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SPW20N60S5
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Data Sheet

0-1: $2.02
1-10: $1.96
10-100: $1.91
100-500: $1.81
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