Product Summary
The SPW20N60S5 is a cool MOS power transistor.
Parametrics
SPW20N60S5 absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 20A; TC = 100℃, ID: 13A; (2)Pulsed drain current, tp limited by Tjmax, IDpuls: 40A; (3)Avalanche energy, single pulse, ID = 10A, VDD = 50V, EAS: 690mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax2), ID = 20A, VDD = 50V, EAR: 1mj; (5)Avalanche current, repetitive tAR limited by Tjmax, IAR: 20A; (6)Gate source voltage, VGS: ±20 V; (7)Gate source voltage AC (f >1Hz), VGS: ±30V; (8)Power dissipation, TC = 25℃, Ptot: 208W; (9)Operating and storage temperature, Tj, Tstg: -55 to +150℃.
Features
SPW20N60S5 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SPW20N60S5 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 20A |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
SPW20N60C2 |
Infineon Technologies |
MOSFET N-CH 600V 20A TO-247 |
Data Sheet |
Negotiable |
|
|||||||||||||
SPW20N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 20.7A |
Data Sheet |
|
|
|||||||||||||
SPW20N60CFD |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 20.7A |
Data Sheet |
|
|
|||||||||||||
SPW20N60S5 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 20A |
Data Sheet |
|
|
|||||||||||||
SPW21N50C3 |
Infineon Technologies |
MOSFET COOL MOS PWR TRANS 560V 21A |
Data Sheet |
|
|
|||||||||||||
SPW24N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 24.3A |
Data Sheet |
|
|