(Hong Kong)
Product Summary
The CYK128K16MCCBU-70BVIT is a high-performance CMOS Pseudo Static RAM organized as 128K words by 16 bits that supports an asynchronous memory interface. The CYK128K16MCCBU-70BVIT features advanced circuit design to provide ultra-low active current. Writing to the CYK128K16MCCBU-70BVIT is accomplished by asserting Chip Enable (CE LOW) and Write Enable (WE) input LOW. Reading from the device is accomplished by asserting Chip Enable (CE LOW) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH.
Parametrics
CYK128K16MCCBU-70BVIT absolute maximum ratings: (1)Storage Temperature:–65℃ to + 150℃; (2)Ambient Temperature with Power Applied:–55℃ to + 125℃; (3)Supply Voltage to Ground Potential:–0.4V to 4.6V; (4)DC Voltage Applied to Outputs in High-Z State:–0.4V to 3.7V; (5)DC Input Voltage:–0.4V to 3.7V; (6)Output Current into Outputs (LOW):20 mA; (7)Static Discharge Voltage: ＞ 2001V; (8)Latch-up Current:＞ 200 mA.
Features
CYK128K16MCCBU-70BVIT features: (1)Wide voltage range: 2.70V to 3.30V; (2)Access Time: 55 ns, 70 ns; (3)Ultra-low active power: Typical active current: 1mA @ f = 1 MHz, Typical active current: 14 mA @ f = fmax (For 55-ns), Typical active current: 8 mA @ f = fmax (For 70-ns); (4)Ultra low standby power; (5)Automatic power-down when deselected; (6)CMOS for optimum speed/power; (7)Offered in a 48-ball BGA Package.
Diagrams
