(Hong Kong)
Product Summary
The 2SB502A is a silicon PNP transistor.
Parametrics
2SB502A absolute maximum ratings: (1)Maximum collector power dissipation (Pc): 25W; (2)Maximum collector-base voltage (Ucb): 110V; (3)Maximum collector-emitter voltage (Uce): 80V; (4)Maximum emitter-base voltage (Ueb): 10V; (5)Maximum collector current (Ic max): 3A; (6)Maximum junction temperature (Tj): 150℃; (7)Transition frequency (ft): 800KHz; (8)Collector capacitance (Cc), Pf: 350; (9)Forward current transfer ratio (hFE), min/max: 30/280; (10)Package of 2SB502A transistor: TO66.
Features
2SB502A features: (1)PC= 25W (Tc= 25℃); (2)VCE(sat)= -1.5V(Max.)(TC= -3A); (3)VEBO= -10V.
Diagrams
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