(Hong Kong)
Product Summary
The BYQ30E-200 is a Dual, ultra-fast, epitaxial rectifier diode. The BYQ30E-200 intended for use as output rectifier in high frequency switched mode power supplies. The BYQ30E-200 is supplied in the SOT78 conventional leaded package.
Parametrics
BYQ30E-200 absolute maximum ratings: (1)Peak repetitive reverse voltage, VRRM: 150 to 200 V; (2)Working peak reverse voltage, VRWM: 150 to 200 V; (3)Continuous reverse voltage, VR: 150 to 200 V; (4)Average rectified output current (both diodes conducting), square wave; δ = 0.5; Tmb ≤ 104℃, IO(AV): 16 A; (5)Repetitive peak forward current per diode, square wave; δ = 0.5; Tmb ≤ 104℃, IFRM: 16 A; (6)Non-repetitive peak forward current per diode, t = 10 ms, IFSM: 80 A; t = 8.3 ms, IFSM: 88 A; (7)Peak repetitive reverse surge current per diode, tp = 2 ms; δ = 0.001, IRRM: 0.2 A; (8)Peak non-repetitive reverse surge current per diode, tp = 100 ms, IRSM: 0.2 A; (9)Operating junction temperature, Tj: 150℃; (10)Storage temperature, Tstg: -40 to 150℃.
Features
BYQ30E-200 features: (1)Low forward volt drop; (2)Fast switching; (3)Soft recovery characteristic; (4)Reverse surge capability; (5)High thermal cycling performance; (6)Low thermal resistance.
Diagrams
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 BYQ30E-200 |
NXP Semiconductors |
Rectifiers RAIL REC-EPI |
Data Sheet |
Negotiable |
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BYQ30E-200,127 |
NXP Semiconductors |
Rectifiers RAIL REC-EPI |
Data Sheet |
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