Product Summary

The FDPF12N60NZ is an N-Channel enhancement mode power field effect transistor. The FDPF12N60NZ is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FDPF12N60NZ is well suited for high efficient switched mode power supplies and active power factor correction.

Parametrics

FDPF12N60NZ absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 600 V; (2)Drain Current - Continuous (TC = 25℃), ID: 7.5A; Continuous (TC = 100℃), ID: 4.5A; (3)Drain Current - Pulsed, IDM: 30A; (4)Gate-Source voltage, VGSS: ±30 V; (5)Single Pulsed Avalanche Energy, EAS: 335 mJ; (6)Avalanche Current, IAR: 7.5A; (7)Repetitive Avalanche Energy, EAR: 5 mJ; (8)Peak Diode Recovery dv/dt, dv/dt: 4.5 V/ns; (9)Power Dissipation (TC = 25℃), PD: 50W; Derate above 25℃, PD: 0.35W/℃; (10)Operating and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (11)Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds, TL: 300℃.

Features

FDPF12N60NZ features: (1)7.5A, 350V, RDS(on) = 0.38Ω @VGS = 10 V; (2)Low gate charge ( typical 18 nC); (3)Low Crss ( typical 15 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FDPF12N60NZ circuit diagram

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