(Hong Kong)
Product Summary
The IPD031N03LG is a OptiMOS3 Power-Transistor.
Parametrics
IPD031N03LG absolute maximum ratings: (1)Continuous drain current, VGS = 10V, TC = 25℃, ID: 90A; VGS = 10V, TC = 100℃, ID: 90A; VGS = 4.5V, TC = 25℃, ID: 90A; VGS = 4.5V, TC = 100℃, ID: 79A; (2)Pulsed drain current, TC = 25℃, ID,pulse: 400A; (3)Avalanche current, single pulse, TC = 25℃, IA: 90A; (4)Avalanche energy, single pulse, ID = 90A, RGS = 25Ω, EAS: 60 mJ; (5)Reverse diode dv /dt, ID = 90 A, VDS = 24 V, di/dt = 200 A/μs,; (6)Tj, max = 175℃, dv /dt: 6 kV/μs; (7)Gate source voltage, VGS: ±20 V.
Features
IPD031N03LG features: (1)Fast switching MOSFET for SMPS; (2)Optimized technology for DC/DC converters; (3)Qualified according to JEDEC1) for target applications; (4)N-channel, logic level; (5)Excellent gate charge xRDS(on) product (FOM); (6)Very low on-resistance RDS(on); (7)Avalanche rated; (8)Pb-free plating; RoHS compliant; (9)Halogen-free according to IEC61249-2-21.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IPD031N03LG |
Infineon Technologies (VA) |
MOSFET N-CH 30V 90A TO252-3 |
Data Sheet |
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IPD025N06NATMA1 |
Infineon Technologies |
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Data Sheet |
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IPD031N03L G |
Infineon Technologies |
MOSFET N-CH 30V 90A 3.1mOhms |
Data Sheet |
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IPD031N03LG |
Infineon Technologies (VA) |
MOSFET N-CH 30V 90A TO252-3 |
Data Sheet |
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IPD031N03M G |
Infineon Technologies |
MOSFET OptiMOS 3 PWR TRANS 30V 90A |
Data Sheet |
Negotiable |
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IPD031N06L3 G |
Infineon Technologies |
MOSFET N-Channel MOSFET 20-200V |
Data Sheet |
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IPD034N06N3 G |
Infineon Technologies |
MOSFET N-Channel MOSFET 20-200V |
Data Sheet |
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