Product Summary

The IPD053N08N3G is a OptiMOS3 Power-Transistor.

Parametrics

IPD053N08N3G absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 90 A; TC = 100℃, ID: 90A; (2)Pulsed drain current, TC = 25℃, ID,pulse: 360A; (3)Avalanche energy, single pulse, ID = 90A, RGS = 25Ω, EAS: 190 mJ; (4)Gate source voltage, VGS: ±20 V; (5)Power dissipation, TC = 25℃, Ptot: 150 W; (6)Operating and storage temperature, Tj, Tstg: -55 to 175℃.

Features

IPD053N08N3G features: (1)N-channel, normal level; (2)Excellent gate charge x R DS(on) product (FOM); (3)Very low on-resistance R DS(on); (4)175℃ operating temperature; (5)Pb-free lead plating; RoHS compliant; (6)Qualified according to JEDEC1) for target application; (7)Ideal for high-frequency switching and synchronous rectification.

Diagrams

IPD053N08N3G circuit diagram

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