(Hong Kong)
Product Summary
The IPP065N04NG is a OptiMOS3 Power-Transistor.
Parametrics
IPP065N04NG absolute maximum ratings: (1)Continuous drain current, VGS = 10V, Tc = 25℃, ID: 50A; Vgs = 10V, Tc = 100℃, ID: 50A; (2)Pulsed drain current, Tc = 25℃, ID,pulse: 350A; (3)Avalanche current, single pulse, Tc = 25℃, IAS: 50A; (4)Avalanche energy, single pulse, Id = 35 A, Rgs = 25Ω, EAS: 50mJ; (5)Gate source voltage, VGS: ±20V.
Features
IPP065N04NG features: (1)Fast switching MOSFET for SMPS; (2)Optimized technology for DC/DC converters; (3)Qualified according to JEDEC for target applications; (4)N-channel, normal level; (5)Excellent gate charge xRDS(on) product (FOM); (6)Very low on-resistance RDs(on); (7)100% Avalanche tested; (8)Pb-free plating; RoHS compliant.
Diagrams
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