IRF2804PBF

IRF2804PBF, AUTOMOTIVE MOSFET, TO-220AB, 40V, 280A, International Rectifier

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Price:: US $0.50~3.50 / piece [Get Latest Price]

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PartNumber:: IRF2804PBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 12+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2012-07-30

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Product Summary

The IRF2804PBF is a HEXFET Power MOSFET. Specifically designed for Automotive applications, the IRF2804PBF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make the IRF2804PBF an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parametrics

IRF2804PBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V (Silicon Limited): 270A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 190A; (3)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V (Package Limited): 75A; (4)Pulsed Drain Current, IDM: 1080A ; (5)PD @TC = 25℃ Maximum Power Dissipation: 300W; (6)Linear Derating Factor: 2.0W/℃; (7)Gate-to-Source Voltage, VGS: ±20V; (8)Single Pulse Avalanche Energy (Thermally Limited), EAS: 540mJ; (9)Single Pulse Avalanche Energy Tested Value, EAS(tested): 1160mJ; (10)Avalanche Current, IAR: 270A; (11)Repetitive Avalanche Energy, EAR: 1160mJ; (12)Operating Junction and Storage Temperature Range, TJ, TSTG: ℃; (13)Soldering Temperature, for 10 seconds: 300℃; (14)Mounting torque, 6-32 or M3 screw: 10 lbf·in (1.1N·m).

Features

IRF2804PBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Repetitive Avalanche Allowed up to Tjmax; (6)Lead-Free.