IRF5210PBF

IRF5210PBF, HEXFET Power MOSFET, TO-220AB, -100V, -40A, International Rectifier

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PartNumber:: IRF5210PBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 12+

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Products Upload time: 2012-07-30

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Product Summary

The IRF5210PBF is a Fifth Generation HEXFET from International Rectifier. The IRF5210PBF utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF5210PBF is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parametrics

IRF5210PBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: -40 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: -29 A; (3)IDM Pulsed Drain Current: -140 A; (4)PD @TC = 25℃ Power Dissipation: 200 W; (5)Linear Derating Factor: 1.3 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 780 mJ; (8)IAR Avalanche Current: -21 A; (9)EAR Repetitive Avalanche Energy: 20 mJ; (10)dv/dt Peak Diode Recovery dv/dt: -5.0 V/ns; (11)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 175℃; (12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (13)Mounting torque, 6-32 or M3 screw: 10 lbf·in(1.1 N·m).

Features

IRF5210PBF features: (1)Advanced process technology; (2)Ultra low on-resistance; (3)Dynamic dV/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)P-Channel; (7)Fully avanche rated; (8)Lead-free.