Product Summary
The IRF610PBF is a Third generation Power MOSFET from Vishay. The IRF610PBF provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the IRF610PBF contribute to its wide acceptance throughout the industry.
Parametrics
IRF610PBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 3.3 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 2.1 A; (3)Pulsed Drain Current, IDM: 10 A; (4)PD @TC = 25℃ Power Dissipation: 50 W; (5)Linear Derating Factor: 0.29 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Single Pulse Avalanche Energy, EAS: 64 mJ; (8)Avalanche Current, IAR: 3.3 A; (9)Repetitive Avalanche Energy, EAR: 3.6 mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 5.0 V/ns; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (12)Soldering Temperature, for 10 seconds 300 (1.6mm from case)℃; (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).
Features
IRF610PBF features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)Fast Switching; (4)Ease of Paralleling; (5)Simple Drive Requirements; (6)Lead-free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF610PBF |
Vishay/Siliconix |
MOSFET N-Chan 200V 3.3 Amp |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRF610 |
Vishay/Siliconix |
MOSFET N-Chan 200V 3.3 Amp |
Data Sheet |
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IRF610, SiHF610 |
Other |
Data Sheet |
Negotiable |
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IRF610_R4941 |
Fairchild Semiconductor |
MOSFET TO-220AB N-Ch Power |
Data Sheet |
Negotiable |
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IRF6100 |
MOSFET P-CH 20V 5.1A FLIP-FET |
Data Sheet |
Negotiable |
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IRF6100PBF |
MOSFET P-CH 20V 5.1A FLIPFET |
Data Sheet |
Negotiable |
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IRF610A |
Other |
Data Sheet |
Negotiable |
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