Product Summary
The IRF8010PBF is a HEXFET Power MOSFET. The applications of the IRF8010PBF include High frequency DC-DC converters, UPS and Motor Control, Lead-Free.
Parametrics
IRF8010PBF absolute maximum ratings: absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 80 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 57 A; (3)Pulsed Drain Current, IDM: 320 A; (4)PD @TC = 25℃ Power Dissipation: 260 W; (5)Linear Derating Factor: 1.8 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Peak Diode Recovery dv/dt, dv/dt: 16 V/ns; (8)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to + 175℃; (9)Soldering Temperature, for 10 seconds: 300 (1.6mm from case)℃; (10)Mounting torqe, 6-32 or M3 screw: 10 lbf·in (1.1N·m).
Features
IRF8010PBF features: (1)Low Gate-to-Drain Charge to Reduce Switching Losses; (2)Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001); (3)Fully Characterized Avalanche Voltage and Current; (4)Typical RDS(on) = 12mΩ.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF8010PBF |
International Rectifier |
MOSFET MOSFT 100V 80A 15mOhm 81nC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRF8010 |
Other |
Data Sheet |
Negotiable |
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IRF8010LPBF |
International Rectifier |
MOSFET N-CH 100V 80A TO-262-3 |
Data Sheet |
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IRF8010PBF |
International Rectifier |
MOSFET MOSFT 100V 80A 15mOhm 81nC |
Data Sheet |
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IRF8010S |
Other |
Data Sheet |
Negotiable |
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IRF8010SPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF8010STRLPBF |
International Rectifier |
MOSFET MOSFT 100V 80A 15mOhm 81nC |
Data Sheet |
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