(Hong Kong)
Product Summary
The IRFB20N50KPBF is a HEXFET Power MOSFET. The applications of the IRFB20N50KPBF include Switch Mode Power Supply (SMPS), Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits, Lead-Free.
Parametrics
IRFB20N50KPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V (Silicon Limited): 20 A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V (Silicon Limited): 12 A; (3)Pulsed Drain Current, IDM: 80 A; (4)PD @TC = 25℃, Maximum Power Dissipation: 280 W; (5)Linear Derating Factor: 2.2 W/℃; (6)Gate-to-Source Voltage, VGS: ±30 V; (7)Peak Diode Recovery, dv/dt: 6.9 V/ns; (8)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 TO 150℃; (9)Soldering Temperature, for 10 seconds(1.6mm from case): 300℃; (10)Mounting torque, 6-32 or M3 screw: 10N.
Features
IRFB20N50KPBF features: (1)Low Gate Charge Qg results in Simple Drive Requirement; (2)Improved Gate, Avalanche and Dynamicdv/dt Ruggedness; (3)Fully Characterized Capacitance and Avalanche Voltage and Current; (4)Low RDS(on).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 IRFB20N50KPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 20 Amp |
Data Sheet |
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Quantity | ||||||||||||
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IRFB11N50A |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
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IRFB11N50APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
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IRFB13N50A |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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IRFB13N50APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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IRFB16N50K |
Vishay/Siliconix |
MOSFET N-Chan 500V 17 Amp |
Data Sheet |
Negotiable |
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IRFB16N50KPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 17 Amp |
Data Sheet |
Negotiable |
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