(Hong Kong)
Product Summary
The IRFB38N20DPBF is a HEXFET Power MOSFET. The applications of the IRFB38N20DPBF include high frequency DC-DC converters, High frequency DC-DC converters-free.
Parametrics
IRFB38N20DPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 44 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 32 A; (3)Pulsed Drain Current, IDM: 180 A; (4)PD @TA = 25℃ Power Dissipation: 3.8 W; (5)PD @TC = 25℃ Power Dissipation: 320 W; (6)Linear Derating Factor: 2.1 W/℃; (7)Gate-to-Source Voltage, VGS: ±30 V; (8)Peak Diode Recovery dv/dt, dv/dt: 9.5 V/ns; (9)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to + 175℃; (10)Soldering Temperature, for 10 seconds: 300 (1.6mm from case℃); (11)Mounting torqe, 6-32 or M3 screw: 10 lbf·in (1.1N·m).
Features
IRFB38N20DPBF features: (1)Low Gate-to-Drain Charge to Reduce Switching Losses; (2)Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001); (3)Fully Characterized Avalanche Voltage and Current.
Diagrams
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 IRFB38N20DPBF |
International Rectifier |
MOSFET MOSFT 200V 44A 54mOhm 60nC |
Data Sheet |
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