Product Summary
The IRFBG30PBF is a Power MOSFET. Third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the IRFBG30PBF contribute to its wide acceptance throughout the industry.
Parametrics
IRFBG30PBF absolute maximum ratings: (1)Drain-Source Voltage, VDS: 1000V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current, VGS at 10 V, TC = 25℃, ID: 3.1A; TC = 100℃, ID: 2.0 A; (4)Pulsed Drain Currenta, IDM: 12A; (5)Linear Derating Factor: 1.0 W/℃; (6)Single Pulse Avalanche Energy, EAS: 280 mJ; (7)Repetitive Avalanche Current, IAR: 3.1 A; (8)Repetitive Avalanche Energy, EAR: 13 mJ; (9)Maximum Power Dissipation TC = 25℃, PD: 125 W; (10)Peak Diode Recovery dV/dt, dV/dt: 1.0 V/ns; (11)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to + 175℃; (12)Soldering Recommendations (Peak Temperature) for 10s: 300℃; (13)Mounting Torque, 6-32 or M3 screw: 10lbf · in; 1.1N · m.
Features
IRFBG30PBF features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)Fast Switching; (4)Ease of Paralleling; (5)Simple Drive Requirements; (6)Lead (Pb)-free Available.
Diagrams
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![]() MOSFET 1000V Single N-Channel HEXFET |
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![]() MOSFET N-Chan 500V 11 Amp |
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![]() IRFB13N50A |
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![]() MOSFET N-Chan 500V 14 Amp |
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![]() IRFB13N50APBF |
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![]() IRFB16N50K |
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![]() MOSFET N-Chan 500V 17 Amp |
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![]() IRFB16N50KPBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 17 Amp |
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![]() Negotiable |
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