IRFD9120PBF

IRFD9120PBF, Power MOSFET, DIP-4, 100V, 1.0 Amp, International Rectifier

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Price:: US $0.50~3.50 / piece [Get Latest Price]

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PartNumber:: IRFD9120PBF

Brand:: International Rectifier - IR | Pack: DIP | D/C: 12+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-07-30

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Part Number:IRFD9120PBF
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Product Summary

The IRFD9120PBF is a Power MOSFET. Third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain of the IRFD9120PBF serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

Parametrics

IRFD9120PBF absolute maximum ratings: (1)Drain-Source Voltage, VDS: -100V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current, VGS at -10 V, TC = 25℃, ID: -1.0A; TC = 100℃, ID: -0.70 A; (4)Pulsed Drain Currenta, IDM: -8.0A; (5)Linear Derating Factor: 0.0083 W/℃; (6)Single Pulse Avalanche Energy, EAS: 140 mJ; (7)Repetitive Avalanche Current, IAR: -1.0 A; (8)Repetitive Avalanche Energy, EAR: 0.13 mJ; (9)Maximum Power Dissipation TC = 25℃, PD: 1.3 W; (10)Peak Diode Recovery dV/dt, dV/dt: -5.5 V/ns; (11)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to + 175℃; (12)Soldering Recommendations (Peak Temperature) for 10s: 300℃.

Features

IRFD9120PBF features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)For Automatic Insertion; (4)End Stackable; (5)P-Channel; (6)175℃ Operating Temperature; (7)Fast Switching; (8)Lead (Pb)-free Available.