Product Summary

The IRFP4668PBF is a HEXFET Power MOSFET. The applications of the IRFP4668PBF include High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits.

Parametrics

IRFP4668PBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 130A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 92A; (3)Pulsed Drain Current, IDM: 520A; (4)PD @TC = 25℃ Maximum Power Dissipation: 520 W; (5)Linear Derating Factor: 3.5 W/℃; (6)Gate-to-Source Voltage, VGS: ±30 V; (7)Peak Diode Recovery, dv/dt: 57 V/ns; (8)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (9)Soldering Temperature, for 10 seconds(1.6mm from case): 300℃; (10)Mounting torque, 6-32 or M3 screw: 10lb·in (1.1N·m).

Features

IRFP4668PBF features: (1)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability; (4)Lead-Free.

Diagrams

IRFP4668PBF circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFP4668PBF
IRFP4668PBF
International Rectifier
MOSFET MOSFT 200V 130A 2.6mOhm 161nC Qg
Data Sheet
0-1: $4.84
1-25: $3.54
25-100: $2.80
100-250: $2.69
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(USD)		 Quantity
IRFP044
IRFP044
Vishay/Siliconix
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Data Sheet
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Data Sheet
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IRFP044N

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Data Sheet
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IRFP044NPBF
IRFP044NPBF
International Rectifier
MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC
Data Sheet
0-1: $1.21
1-25: $0.79
25-100: $0.57
100-250: $0.53
IRFP044PBF
IRFP044PBF
Vishay/Siliconix
MOSFET N-Chan 60V 57 Amp
Data Sheet
Negotiable 
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IRFP048
Vishay/Siliconix
MOSFET N-Chan 60V 70 Amp
Data Sheet
0-331: $3.92
331-500: $3.60
500-1000: $3.46
1000-2000: $3.37