Product Summary
The IRFP4710PBF is a HEXFET Power MOSFT. The applications of the IRFP4710PBF include High frequency DC-DC converters, Motor Control, Uninterruptible Power Supplies.
Parametrics
IRFP4710PBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 72A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 51 A; (3)Pulsed Drain Current, IDM: 300A; (4)PD @TC = 25℃ Power Dissipation: 190 W; (5)Linear Derating Factor: 1.2 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Peak Diode Recovery dv/dt, dv/dt: 8.2 V/ns; (8)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to + 175℃; (9)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (10)Mounting torqe, 6-32 or M3 screw: 10 lbf·in (1.1N·m).
Features
IRFP4710PBF features: (1)Low Gate-to-Drain Charge to Reduce Switching Losses; (2)Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001); (3)Fully Characterized Avalanche Voltage and Current.
Diagrams
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![]() IRFP4710PBF |
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