(Hong Kong)
Product Summary
The IRFR220NTRLPBF is a HEXFET Power MOSFET. The application of the IRFR220NTRLPBF includes High frequency DC-DC converter.
Parametrics
IRFR220NTRLPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 5.0A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 3.5 A; (3)Pulsed Drain Current, IDM: 20A; (4)PD @TC = 25℃ Power Dissipation: 43 W; (5)Linear Derating Factor: 0.71 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Peak Diode Recovery dv/dt, dv/dt: 7.5 V/ns; (8)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (9)Soldering Temperature, for 10 seconds 300 (1.6mm from case)℃.
Features
IRFR220NTRLPBF features: (1)Low Gate to Drain Charge to Reduce Switching Losses; (2)Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001); (3)Fully Characterized Avalanche Voltage and Current.
Diagrams
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 IRFR220NTRLPBF |
International Rectifier |
MOSFET MOSFT 200V 5A 600mOhm 15nC |
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