Product Summary
The IRFS31N20DPBF is a HEXFET Power MOSFET.
Parametrics
IRFS31N20DPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 31A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 21A; (3)Pulsed Drain Current, IDM: 124A; (4)PD @TA = 25℃ Power Dissipation: 3.1W; (5)PD @TC = 25℃ Power Dissipation: 200W; (6)Linear Derating Factor: 1.3 W/℃; (7)Gate-to-Source Voltage, VGS: ±30 V; (8)Peak Diode Recovery dv/dt, dv/dt: 2.1 V/ns; (9)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to + 175℃; (10)Soldering Temperature, for 10 seconds 300 (1.6mm from case )℃; (11)Mounting torqe, 6-32 or M3 screw: 10 lbf·in (1.1N·m).
Features
IRFS31N20DPBF features: (1)High Frequency DC-DC converters; (2)Lead-Free.
Diagrams
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![]() IRFS31N20DPBF |
![]() International Rectifier |
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![]() IRFS11N50A |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 11 Amp |
![]() Data Sheet |
![]() Negotiable |
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![]() IRFS11N50APBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 11 Amp |
![]() Data Sheet |
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![]() IRFS11N50ATRL |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 11 Amp |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() IRFS11N50ATRLP |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 11 Amp |
![]() Data Sheet |
![]() Negotiable |
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![]() IRFS11N50ATRR |
![]() |
![]() MOSFET N-CH 500V 11A D2PAK |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() IRFS11N50ATRRP |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 11 Amp |
![]() Data Sheet |
![]() Negotiable |
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