IRFZ34NPBF

IRFZ34NPBF, HEXFET Power MOSFET, TO-220-3, 55V, 29A, International Rectifier

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PartNumber:: IRFZ34NPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 12+

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Products Upload time: 2012-07-30

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Product Summary

The IRFZ34NPBF is a HEXFET Power MOSFET. The IRFZ34NPBF is a Fifth Generation HEXFET from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFZ34NPBF is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parametrics

IRFZ34NPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 29A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 20A; (3)Pulsed Drain Current, IDM: 100A; (4)PD @TC = 25℃, Power Dissipation: 68 W; (5)Linear Derating Factor: 0.45 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Single Pulse Avalanche Energy, EAS: 65 mJ; (8)Avalanche Current, IAR: 16 A; (9)Repetitive Avalanche Energy, EAR: 6.8 mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 5.0 V/ns; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (12)Soldering Temperature, for 10 seconds 300℃ (1.6mm from case ); (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRFZ34NPBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Ease of Paralleling; (7)Lead-Free.