Product Summary

The IRGPS40B120UPBF is an insulated gate bipolar transistor.

Parametrics

IRGPS40B120UPBF absolute maximum ratings: (1)Collector-to-Emitter Voltage, VCES: 1200 V; (2)Continuous Collector Current, @ TC = 25℃, IC: 80A; (3)Continuous Collector Current, @ TC = 100℃, IC: 40A; (4)Pulsed Collector Current, ICM: 160 A; (5)Clamped Inductive Load Current, ILM: 160A; (6)Gate-to-Emitter Voltage, VGE: ±20 V; (7)Maximum Power Dissipation, @ TC = 25℃, PD: 595W; (8)Maximum Power Dissipation, @ TC = 100℃, PD: 238W; (9)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (10)Soldering Temperature, for 10 sec: 300 (0.063 in. (1.6mm) from case).

Features

IRGPS40B120UPBF features: (1)Non Punch Through IGBT Technology; (2)10μs Short Circuit Capability; (3)Square RBSOA; (4)Positive VCE (on) Temperature Coefficient; (5)Super-247 Package; (6)Lead-Free.

Diagrams

IRGPS40B120UPBF circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRGPS40B120UPBF
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0-1: $6.42
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(USD)		 Quantity
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