Product Summary

The IRLB4132PBF is a HEXFET Power MOSFET. The applications of the IRLB4132PBF include DC Motor Drive, High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits.

Parametrics

IRLB4132PBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V, @ TC = 25℃, ID: 180A; (2)Continuous Drain Current, VGS @ 10V, @ TC = 100℃, ID: 130 A; (3)Pulsed Drain Current, IDM: 730A; (4)Maximum Power Dissipation, @TC = 25℃, PD: 370W; (5)Linear Derating Factor: 2.5 W/℃; (6)Gate-to-Source Voltage, VGS: ±16 V; (7)Peak Diode Recovery, dv/dt: 21V/ns; (8)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (9)Soldering Temperature, for 10 seconds(1.6mm from case): 300℃; (10)Mounting torque, 6-32 or M3 screw: 10lbin (1.1Nm).

Features

IRLB4132PBF features: (1)Optimized for Logic Level Drive; (2)Very Low RDS(ON) at 4.5V VGS; (3)Superior RQ at 4.5V VGS; (4)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (5)Fully Characterized Capacitance and Avalanche SOA; (6)Enhanced body diode dV/dt and dI/dt Capability; (7)Lead-Free.

Diagrams

IRLB4132PBF circuit diagram

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