(Hong Kong)
Product Summary
The MJE172G is a complementary silicon power plastic transistor. The MJE172G is designed for low power audio amplifier and low-current, high-speed switching applications.
Parametrics
MJE172G absolute maximum ratings: (1)Collector-Base Voltage, VCEO: 100 Vdc; (2)Collector-Emitter Voltage, VCB: 80 Vdc; (3)Emitter-Base Voltage, VEB: 7.0 Vdc; (4)Collector Current - Continuous, IC: 3.0 Adc; -Peak, IC: 6.0 Adc; (5)Base Current, IB: 1.0 Adc; (6)Total Power Dissipation @ TC = 25℃, PD: 1.5 W; Derate above 25℃, PD: 0.012 mW/℃; (7)Total Power Dissipation @ TA = 25℃, PD: 12.5 W; Derate above 25℃, PD: 0.1 mW/℃; (8)Operating and Storage Junction Temperature Range, TJ, Tstg: -65 to +150℃.
Features
MJE172G (1)Collector-Emitter Sustaining Voltage - VCEO(sus) = 80 Vdc; (2)DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc; = 12 (Min) @ IC = 1.5 Adc; (3)Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc; (4)Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB; (5)Epoxy Meets UL 94 V-0 @ 0.125 in; (6)ESD Ratings: Machine Model, C Human Body Model, 3B; (7)Pb-Free Packages are Available.
Diagrams
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 MJE172G |
ON Semiconductor |
Transistors Bipolar (BJT) 3A 80V 12.5W PNP |
Data Sheet |
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