Product Summary

TheMTM2N50 is a power field effect trainsistor. The MTM2N50 is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

Parametrics

MTM2N50 absolute maximum ratings: (1)Drain-source voltage, VDSS: 500V; (2)Drain-gate voltage (RGS= 1mΩ), VDGR: 500V; (3)Gate-source voltage, continuous, VGS: ±20V; Non-repetitive(TP≤50μs), VGSM: ±40V; (4)Drain current, continuous, ID: 2A; pulsed, IDM: 7A; (5)Total power dissipation at TC= 25℃, PD: 75W/℃; Derate above 25℃, PD: 0.6W/℃; (6)Operating and storage temperature range, TJ,Tstg: -65 to 150℃.

Features

MTM2N50 features: (1)Silicon gate for fast switching speeds- switching times specified at 100℃; (2)Designer’s gata- IDSS, VDS, VGS and SOA specified at Elevated temperature; (3)Rugged- SOA is power dissipation limited; (4)Source-to-drain diode characterized for use with inductive loads.

Diagrams

MTM2N50 circuit diagram

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