Product Summary

The SIHP18N50C-E3 is a power MOSFET.

Parametrics

SIHP18N50C-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 500V; (2)Gate-Source Voltage, VGS: ±30V; (3)Continuous Drain Current (TJ = 150℃), VGS at 10 V, TC = 25℃, ID: 18A; TC = 100℃, ID: 11 A; (4)Pulsed Drain Current, IDM: 72A; (5)Linear Derating Factor, TO-220AB: 1.8 W/℃; (6)Single Pulse Avalanche Energy, EAS: 361 mJ; (7)Maximum Power Dissipation, TO-220AB, PD: 223 W; (8)Peak Diode Recovery dV/dtd, dV/dt: 5 V/ns; (9)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to + 150℃; (10)Soldering Recommendations (Peak Temperature), for 10s: 300℃.

Features

SIHP18N50C-E3 features: (1)Low Figure-of-Merit Ron x Qg; (2)100 % Avalanche Tested; (3)High Peak Current Capability; (4)dV/dt Ruggedness; (5)Improved trr/Qrr; (6)Improved Gate Charge; (7)High Power Dissipations Capability; (8)Compliant to RoHS Directive 2002/95/EC.

Diagrams

SIHP18N50C-E3 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SIHP18N50C-E3
SIHP18N50C-E3
Vishay/Siliconix
MOSFET 560V 18A 223W 270mohm @ 10V
Data Sheet
0-1: $1.71
1-10: $1.38
10-100: $1.24
100-250: $1.10
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SIHP10N40D-E3
SIHP10N40D-E3
Vishay/Siliconix
MOSFET 450V 10A 147W
Data Sheet
0-1: $1.07
1-25: $0.86
25-50: $0.82
50-100: $0.77
SIHP12N50C-E3
SIHP12N50C-E3
Vishay/Siliconix
MOSFET N-Channel 500V
Data Sheet
0-1: $5.04
1-25: $4.28
25-100: $3.64
100-250: $3.10
SIHP15N60E-GE3
SIHP15N60E-GE3
Vishay/Siliconix
MOSFET N-Channel 600V
Data Sheet
0-560: $1.15
560-1000: $1.02
1000-2000: $0.98
2000-5000: $0.95
SIHP17N60D-E3
SIHP17N60D-E3
Vishay
MOSFET 600V 17A 277.8W 340mOhm @ 10V
Data Sheet
0-1: $2.32
1-10: $1.96
10-100: $1.61
100-250: $1.43
SiHP17N60D-GE3
SiHP17N60D-GE3
Vishay/Siliconix
MOSFET 600V 17A 277.8W 340mOhm @10V
Data Sheet
0-560: $1.28
560-1000: $1.14
1000-2000: $1.11
2000-5000: $1.07
SiHP18N50C, SiHF18N50C
SiHP18N50C, SiHF18N50C
Other

Data Sheet
Negotiable