Product Summary

The SPP04N80C3 is a cool MOS power transistor features new revolutionary high voltage technology. The applications of the SPP04N80C3 include Industrial application with high DC bulk voltage, Switching Application (i.e. active clamp forward).

Parametrics

SPP04N80C3 absolute maximum ratings: (1)Continuous drain current, TC=25℃, ID: 4 A; TC=100℃, ID: 2.5A; (2)Pulsed drain current, TC=25℃, ID,pulse: 12A; (3)Avalanche energy, single pulse, ID = 0.8 A, VDD = 50 V, EAS: 170 mJ; (4)Avalanche energy, repetitive, tAR, ID = 4 A, VDD = 50 V, EAR: 0.1mJ ; (5)Avalanche current, repetitive tAR, IAR: 4 A; (6)MOSFET dv /dt ruggedness, VDS=0 to 640V, dv /dt: 50 V/ns; (7)Gate source voltage, static, VGS: ±20V; AC (f >1 Hz), VGS: ±30V; (8)Power dissipation, TC=25℃, Ptot: 63W; (9)Operating and storage temperature, Tj, Tstg: -55 to 150℃; (10)Mounting torque, M3 and M3.5 screws: 60 Ncm.

Features

SPP04N80C3 features: (1)New revolutionary high voltage technology; (2)Extreme dv/dt rated; (3)High peak current capability; (4)Qualified according to JEDEC1) for target applications; (5)Pb-free lead plating; RoHS compliant; (6)Ultra low gate charge; (7)Ultra low effective capacitances.

Diagrams

SPP04N80C3 circuit diagram

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