(Hong Kong)
Product Summary
The SPP20N60CFD is a cool MOS power transistor.
Parametrics
SPP20N60CFD absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 20.7A; TC = 100℃, ID: 13.1A; (2)Pulsed drain current, tp limited by Tjmax, IDpuls: 52A; (3)Avalanche energy, single pulse, ID = 8, VDD = 50V, EAS: 690mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax2), ID = 16A, VDD = 50V, EAR: 1mj; (5)Avalanche current, repetitive tAR limited by Tjmax, IAR: 20A; (6)Reverse diode dv/dt, IS = 20.7A, VDS = 480V, Tj = 125℃, dv/dt: 40V/ns; (7)Gate source voltage, VGS: ±20 V; (8)Gate source voltage AC (f >1Hz), VGS: ±30V; (9)Power dissipation, TC = 25℃, Ptot: 208W; (10)Operating and storage temperature, Tj, Tstg: -55 to +150℃.
Features
SPP20N60CFD features: (1)New revolutionary high voltage technology; (2)Worldwide best RDS(on) in TO 220; (3)Ultra low gate charge; (4)Periodic avalanche rated; (5)Extreme dv/dt rated; (6)High peak current capability; (7)Intrinsic fast-recovery body diode; (8)Intrinsic fast-recovery body diode.
Diagrams
| Image | Part No | Mfg | Description |  |
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 SPP20N60CFD |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 20.7A |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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SPP20N60C2 |
Infineon Technologies |
MOSFET N-CH 650V 20A TO-220AB |
Data Sheet |
Negotiable |
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SPP20N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V |
Data Sheet |
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SPP20N60CFD |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 20.7A |
Data Sheet |
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SPP20N60S5 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 20A |
Data Sheet |
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SPP20N65C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 20.7 |
Data Sheet |
Negotiable |
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SPP20N65C3XKSA1 |
Infineon Technologies |
MOSFET |
Data Sheet |
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