Product Summary

The STF13NK50Z is an N-channel SuperMESH power MOSFET. The STF13NK50Z is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The STF13NK50Z complements ST full range of high voltage MOSFETs. The application of the STF13NK50Z includes switching application.

Parametrics

STF13NK50Z absolute maximum ratings: (1)Drain-source voltage (VGS = 0), VDS: 500 V; (2)Gate-source voltage, VGS: ±30 V; (3)Drain current (continuous) at TC = 25℃, ID: 11A; (4)Drain current (continuous) at TC = 100℃, ID: 6.93A; (5)Drain current (pulsed), IDM: 44A; (6)Total dissipation at TC = 25℃, PTOT: 30W; (7)Derating factor: 0.24W/℃; (8)Peak diode recovery voltage slope, dv/dt: 4.5 V/ns; (9)Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC = 25℃), VISO: 2500 V; (10)Operating junction temperature, Storage temperature, Tj, Tstg: -55 to 150℃.

Features

STF13NK50Z features: (1)Extremely high dv/dt capability; (2)100% avalanche tested; (3)Gate charge minimized; (4)Very low intrinsic capacitances; (5)Very good manufacturing repeatability.

Diagrams

STF13NK50Z circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STF13NK50Z
STF13NK50Z
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Data Sheet
0-650: $1.13
650-1000: $0.99
1000-2000: $0.94
2000-5000: $0.91
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(USD)		 Quantity
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STMicroelectronics
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0-1: $1.14
1-10: $1.02
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100-250: $0.72
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100-250: $0.82
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1-10: $1.48
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100-250: $1.13
STF10NM65N
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Data Sheet
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605-1000: $1.06
1000-2000: $1.00
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