(Hong Kong)
Product Summary
The STF13NK50Z is an N-channel SuperMESH power MOSFET. The STF13NK50Z is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The STF13NK50Z complements ST full range of high voltage MOSFETs. The application of the STF13NK50Z includes switching application.
Parametrics
STF13NK50Z absolute maximum ratings: (1)Drain-source voltage (VGS = 0), VDS: 500 V; (2)Gate-source voltage, VGS: ±30 V; (3)Drain current (continuous) at TC = 25℃, ID: 11A; (4)Drain current (continuous) at TC = 100℃, ID: 6.93A; (5)Drain current (pulsed), IDM: 44A; (6)Total dissipation at TC = 25℃, PTOT: 30W; (7)Derating factor: 0.24W/℃; (8)Peak diode recovery voltage slope, dv/dt: 4.5 V/ns; (9)Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC = 25℃), VISO: 2500 V; (10)Operating junction temperature, Storage temperature, Tj, Tstg: -55 to 150℃.
Features
STF13NK50Z features: (1)Extremely high dv/dt capability; (2)100% avalanche tested; (3)Gate charge minimized; (4)Very low intrinsic capacitances; (5)Very good manufacturing repeatability.
Diagrams
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 STF13NK50Z |
STMicroelectronics |
MOSFET N Ch 600V 0.35 Ohm Zener SuperMESH 10A |
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