STP7NK80ZFP

STP7NK80ZFP, Zener-protected SuperMESH Power MOSFET, TO-220FP, 800V, 1.5Ω, 5.2A, STMicroelectronics

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PartNumber:: STP7NK80ZFP

Brand:: STMicroelectronics - ST | Pack: TO | D/C: 12+

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Products Upload time: 2012-07-29

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Product Summary

The STP7NK80ZFP is an N-channel Zener-protected SuperMESH power MOSFET. The STP7NK80ZFP is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The device complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh products. The application of the STP7NK80ZFP includes switching applications.

Parametrics

STP7NK80ZFP absolute maximum ratings: (1)Drain-source voltage (VGS = 0), VDS: 800 V; (2)Gate-source voltage, VGS: ±30 V; (3)Drain current (continuous) at TC = 25℃, ID: 5.2A; (4)Drain current (continuous) at TC = 100℃, ID: 3.3A; (5)Drain current (pulsed), IDM: 20.8A; (6)Total dissipation at TC = 25℃, PTOT: 30W; (7)Derating factor: 0.24 W/℃; (8)Gate source ESD(HBM-C = 100pF, R = 1.5KΩ), VESD(G-S): 4000 V; (9)Peak diode recovery voltage slope, dv/dt: 4.5 V/ns; (10)Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1s; TC = 25℃), VISO: 2500 V; (11)Storage temperature, Tstg: -55 to 150℃; Max. operating junction temperature, Tj: -55 to 150℃.

Features

STP7NK80ZFP features: (1)Extremely high dv/dt capability; (2)100% avalange tested; (3)Gate charge minimized; (4)Very low intrinsic capacitances; (5)Very good manufacturing repeatibility.