(Hong Kong)
Product Summary
The V80100P is a dual high-voltage trench MOS barrier schottky rectifier. The applications of the V80100P include high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
Parametrics
V80100P absolute maximum ratings: (1)Maximum repetitive peak reverse voltage, VRRM: 100 V; (2)Maximum average forward rectified current, per device, IF(AV): 80A; per diode, IF(AV): 40A; (3)Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode, IFSM: 500 A; (4)Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz, IRRM: 1.0 A; (5)Voltage rate of change (rated VR), dV/dt: 10000 V/μs; (6)Operating junction and storage temperature range, TJ, TSTG: -40 to + 150℃.
Features
V80100P features: (1)Trench MOS Schottky technology; (2)Low forward voltage drop, low power losses; (3)High efficiency operation; (4)Low thermal resistance; (5)Solder dip 260℃, 40 s; (6)Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 V80100P |
Other |
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Data Sheet |
Negotiable |
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V80100P-E3/45 |
Vishay Semiconductors |
Schottky (Diodes & Rectifiers) 80 Amp 100 Volt Dual TrenchMOS |
Data Sheet |
Negotiable |
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V80100PW-M3/4W |
Vishay Semiconductors |
Schottky (Diodes & Rectifiers) 80Amp 100volts Dual TrenchMOS |
Data Sheet |
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