(Hong Kong)
Product Summary
The IRF1404ZPBF is a AUTOMOTIVE MOSFET. Specifically designed for Automotive applications,the IRF1404ZPBF utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parametrics
IRF1404ZPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V (Silicon Limited): 180A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 120A; (3)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V (Package Limited): 75A; (4)Pulsed Drain Current, IDM: 710A; (5)PD @TC = 25℃ Power Dissipation: 200 W; (6)Linear Derating Factor: 1.3W/℃; (7)Gate-to-Source Voltage, VGS: ±20V; (8)Single Pulse Avalanche Energy, EAS (Thermally limited): 330 mJ; (9)Single Pulse Avalanche Energy Tested Value, EAS (Tested): 480mJ; (10)Avalanche Current, IAR: 180A; (11)Repetitive Avalanche Energy, EAR: 330mJ; (12)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (13)Soldering Temperature, for 10 seconds: 300℃; (14)Mounting Torque, 6-32 or M3 screw: 10 lbf·in (1.1N·m).
Features
IRF1404ZPBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Repetitive Avalanche Allowed up to Tjmax; (6)Lead-Free.
Diagrams
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 IRF1404ZPBF |
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