IRF540NSTRLPBF

IRF540NSTRLPBF, Power MOSFET, D2PAK, 100V, 33A, International Rectifier

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PartNumber:: IRF540NSTRLPBF

Brand:: International Rectifier - IR | Pack: DIP | D/C: 12+

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Products Upload time: 2012-07-30

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Product Summary

The IRF540NSTRLPBF is an Advanced HEXFET Power MOSFET from International Rectifier. The IRF540NSTRLPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF540NSTRLPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Parametrics

IRF540NSTRLPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 33 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 23 A; (3)Pulsed Drain Current, IDM: 110 A; (4)PD @TC = 25℃ Power Dissipation: 130 W; (5)Linear Derating Factor: 0.87 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Avalanche Current, IAR: 16 A; (8)Repetitive Avalanche Energy, EAR: 13 mJ; (9)Peak Diode Recovery dv/dt, dv/dt: 7.0 V/ns; (10)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (11)Soldering Temperature, for 10 seconds 300 (1.6mm from case)℃; (12)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRF540NSTRLPBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.