Product Summary
The IRF540PBF is a Third generation Power MOSFET from Vishay. The IRF540PBF provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the IRF540PBF contribute to its wide acceptance throughout the industry.
Parametrics
IRF540PBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 28 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 20 A; (3)Pulsed Drain Current, IDM: 110 A; (4)PD @TC = 25℃ Power Dissipation: 150 W; (5)Linear Derating Factor: 1.0 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Single Pulse Avalanche Energy, EAS: 230 mJ; (8)Avalanche Current, IAR: 28 A; (9)Repetitive Avalanche Energy, EAR: 15 mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 5.5 V/ns; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (12)Soldering Temperature, for 10 seconds 300 (1.6mm from case)℃; (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).
Features
IRF540PBF features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)175℃ operating rated; (4)Fast Switching; (5)Ease of Paralleling; (6)Simple Drive Requirements; (7)Lead-free.
Diagrams
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![]() IRF540PBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 100V 28 Amp |
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![]() IRF500 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() IRF510 |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 100V 5.6 Amp |
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![]() IRF510, SiHF510 |
![]() Other |
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![]() Negotiable |
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![]() IRF510_R4941 |
![]() Fairchild Semiconductor |
![]() MOSFET TO-220AB N-Ch Power |
![]() Data Sheet |
![]() Negotiable |
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![]() IRF510A |
![]() Fairchild Semiconductor |
![]() MOSFET 100V .2 OHM 33W |
![]() Data Sheet |
![]() Negotiable |
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![]() IRF510A_Q |
![]() Fairchild Semiconductor |
![]() MOSFET 100V .2 Ohm 33W |
![]() Data Sheet |
![]() Negotiable |
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