Product Summary
The IRF830APBF is a HEXFET Power MOSFET. The applications of the IRF830APBF include Switch Mode Power Supply (SMPS), Uninterruptable Power Supply, High speed power switching, Lead-Free.
Parametrics
IRF830APBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 5.0 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 3.2 A; (3)Pulsed Drain Current, IDM: 20 A; (4)PD @TC = 25℃ Power Dissipation: 74 W; (5)Linear Derating Factor: 1.0 W/℃; (6)Gate-to-Source Voltage, VGS: ±30 V; (7)Peak Diode Recovery dv/dt, dv/dt: 5.3 V/ns; (8)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to + 150℃; (9)Soldering Temperature, for 10 seconds: 300 (1.6mm from case)℃; (10)Mounting torqe, 6-32 or M3 screw: 10 lbf·in (1.1N·m).
Features
IRF830APBF features: (1)Low Gate Charge Qg results in Simple Drive Requirement; (2)Improved Gate, Avalanche and dynamic dv/dt Ruggedness; (3)Fully Characterized Capacitance and Avalanche Voltage and Current; (4)Effective Coss Specified (See AN1001).
Diagrams
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IRF830APBF |
Vishay/Siliconix |
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