(Hong Kong)
Product Summary
The IRFB23N15DPBF is a HEXFET Power MOSFET. The applications of the IRFB23N15DPBF include high frequency DC-DC converters, lead-free.
Parametrics
IRFB23N15DPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V (Silicon Limited): 23 A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V (Silicon Limited): 17 A; (3)Pulsed Drain Current, IDM: 92 A; (4)ID @ TA = 25℃, Power Dissipation: 3.8W; (5)PD @TC = 25℃, Power Dissipation: 136 W; (6)Linear Derating Factor: 0.9 W/℃; (7)Gate-to-Source Voltage, VGS: ±30 V; (8)Peak Diode Recovery, dv/dt: 4.1 V/ns; (9)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 TO 175℃; (10)Soldering Temperature, for 10 seconds(1.6mm from case): 300℃; (11)Mounting torque, 6-32 or M3 screw: 10lb·in (1.1N·m).
Features
IRFB23N15DPBF features: (1)Low Gate-to-Drain Charge to Reduce Switching Losses; (2)Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001); (3)Fully Characterized Avalanche Voltage and Current.
Diagrams
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 IRFB23N15DPBF |
International Rectifier |
MOSFET MOSFT 150V 23A 90mOhm 37nC |
Data Sheet |
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Data Sheet |
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Data Sheet |
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