Product Summary
The IRFP22N50APBF is a HEXFET Power MOSFET. The applications of the IRFP22N50APBF include Switch Mode Power Supply (SMPS), UninterruptIble Power Supply, High Speed Power Switching, Lead-Free.
Parametrics
IRFP22N50APBF absolute maximum ratings: (1)ID @ Tc = 25℃ Continuous Drain Current, Vqs @ -10V: 22 A; (2)ID @ Tc = 100℃ Continuous Drain Current, Vqs @ -10V: 14 A; (3)Pulsed Drain Current, Idm: 88 A; (4)PD @ TC = 25℃ Power Dissipation: 277 W; (5)Linear Derating Factor: 2.2 W/℃; (6)Gate-to-Source Voltage, VGS: ±30 V; (7)Peak Diode Recovery dv/dt, dv/dt: 4.8 V/ns; (8)Operating Junction and Storage Temperature Range, Tj, TSTG: -55 to + 150℃; (9)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (10)Mounting torque, 6-32 or M3 screw: 10 lbf-in (1.1 N-m).
Features
IRFP22N50APBF features: (1)Low Gate Charge Qg results in Simple Drive Requirement; (2)Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; (3)Fully Characterized Capacitance and Avalanche Voltage and Current.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRFP22N50APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 22 Amp |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRFP044 |
Vishay/Siliconix |
MOSFET N-Chan 60V 57 Amp |
Data Sheet |
Negotiable |
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IRFP044, SiHFP044 |
Other |
Data Sheet |
Negotiable |
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IRFP044N |
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Data Sheet |
Negotiable |
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IRFP044NPBF |
International Rectifier |
MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC |
Data Sheet |
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IRFP044PBF |
Vishay/Siliconix |
MOSFET N-Chan 60V 57 Amp |
Data Sheet |
Negotiable |
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IRFP048 |
Vishay/Siliconix |
MOSFET N-Chan 60V 70 Amp |
Data Sheet |
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