IRFP4229PBF

IRFP4229PBF, PDP SWITCH, TO-247AC, 250V, 87A, International Rectifier

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Price:: US $0.50~3.50 / piece [Get Latest Price]

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PartNumber:: IRFP4229PBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 12+

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Products Upload time: 2012-07-30

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Product Summary

The IRFP4229PBF is a PDP switch. The IRFP4229PBF is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. The IRFP4229PBF utilizes the latest processing techniques to achieve low on-resistance per silicon area and low Epulse rating. Additional features of this MOSFET are 175℃ operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET s highly efficient, robust and reliable device for PDP driving applications.

Parametrics

IRFP4229PBF absolute maximum ratings: (1)Gate-to-Source Voltage, VGS: ±30 V; (2)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 44A; (3)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 31A; (4)Pulsed Drain Current, IDM: 180A; (5)IRP @ TC = 100℃ Repetitive Peak Current: 87A; (6)PD @TC = 25℃ Power Dissipation: 310 W; (7)PD @TC = 100℃ Power Dissipation: 150W; (8)Linear Derating Factor: 2.0 W/℃; (9)Operating Junction and Storage Temperature Range, TJ, TSTG: -40 to +175℃; (10)Soldering Temperature for 10 seconds: 300℃; (11)Mounting Torque, 6-32 or M3 Screw: 10lb·in (1.1N·m).

Features

IRFP4229PBF features: (1)Advanced Process Technology; (2)Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications; (3)Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications; (4)Low QG for Fast Response; (5)High Repetitive Peak Current Capability for Reliable Operation; (6)Short Fall & Rise Times for Fast Switching; (7)175℃ Operating Junction Temperature for Improved Ruggedness; (8)Repetitive Avalanche Capability for Robustness and Reliability.