IRG4BC30FDPBF

insulated gate bipolar transistor, TO-220, 600 V, 31 A, 100 W

Rated 5 Rating 5 | reviews | Write a review

Price:: US $1.35~1.55 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $1.35~1.55

PartNumber:: IRG4BC30FDPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Ella's store

(Hong Kong)

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2011-10-10

From Other Seller

Part Number:IRG4BC30FDPBF
US $1.35 - 1.55
IRF3205

US $0.80 - 2.50 / Piece
(0) Remove
IRFP260N

US $1.30 - 4.20 / Piece
(0) Remove
Quantity:

piece

Product Summary

The IRG4BC30FDPBF is an insulated gate bipolar transistor with ultrafast soft recovery diode.

Parametrics

IRG4BC30FDPBF absolute maximum ratings: (1)collector-to-emitter voltage: 600 V; (2)continuous collector current: 31 A; (3)pulsed collector current: 124 A; (4)clamped inductive load current: 124 A; (5)diode continuous forward current: 12 A; (6)diode maximum forward current: 120 A; (7)gate-to-emitter voltage: ±20 V; (8)maximum power dissipation: 100 W; (9)operating junction and storage temperature range: -55 to +150 ℃.

Features

IRG4BC30FDPBF features: (1)Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode); (2)Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3; (3)IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations; (4)Industry standard TO-220AB package; (5)Lead-Free.