(Hong Kong)
Product Summary
The IRG4BC30FDPBF is an insulated gate bipolar transistor with ultrafast soft recovery diode.
Parametrics
IRG4BC30FDPBF absolute maximum ratings: (1)collector-to-emitter voltage: 600 V; (2)continuous collector current: 31 A; (3)pulsed collector current: 124 A; (4)clamped inductive load current: 124 A; (5)diode continuous forward current: 12 A; (6)diode maximum forward current: 120 A; (7)gate-to-emitter voltage: ±20 V; (8)maximum power dissipation: 100 W; (9)operating junction and storage temperature range: -55 to +150 ℃.
Features
IRG4BC30FDPBF features: (1)Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode); (2)Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3; (3)IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations; (4)Industry standard TO-220AB package; (5)Lead-Free.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IRG4BC30FDPBF |
International Rectifier |
IGBT Transistors 600V Fast 1-8kHz |
Data Sheet |
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IRG4BAC50S |
Other |
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Data Sheet |
Negotiable |
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IRG4BAC50U |
Other |
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Data Sheet |
Negotiable |
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IRG4BAC50W |
Other |
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Data Sheet |
Negotiable |
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IRG4BAC50W-S |
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DIODE IGBT 600V SUPER 220 |
Data Sheet |
Negotiable |
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IRG4BAC50W-SPBF |
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IGBT N-CHAN 600V 55A SUPER220 |
Data Sheet |
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IRG4BC10K |
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IGBT UFAST 600V 9.0A TO-220AB |
Data Sheet |
Negotiable |
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