(Hong Kong)
Product Summary
The IRGP4063DPBF is an insulated gate bipolar transistor with ultrafast soft recovery diode.
Parametrics
IRGP4063DPBF absolute maximum ratings: (1)Collector-to-Emitter Voltage, VCES: 600 V; (2)Continuous Collector Current, @ TC = 25℃, IC: 96A; (3)Continuous Collector Current, @ TC = 100℃, IC: 48A; (4)Pulsed Collector Current, ICM: 192A; (5)Clamped Inductive Load Current, ILM: 192A; (6)Diode Continuous Forward Current, @ TC = 25℃, IF: 96A; (7)Diode Continuous Forward Current, @ TC = 100℃, IF: 48A; (8)Diode Maximum Forward Current, IFM: 192A; (9)Gate-to-Emitter Voltage, VGE: ±20 V; (10)Maximum Power Dissipation, @ TC = 25℃, PD: 330W; (11)Maximum Power Dissipation, @ TC = 100℃, PD: 170W; (12)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (13)Soldering Temperature, for 10 sec: 300 (0.063 in. (1.6mm) from case); (14)Mounting Torque, 6-32 or M3 Screw: 10 lbf·in (1.1 N·m).
Features
IRGP4063DPBF features: (1)Low VCE (ON) Trench IGBT Technology; (2)Low switching losses; (3)Maximum Junction temperature 175℃; (4)5μs short circuit SOA; (5)Square RBSOA; (6)100% of the parts tested for 4X rated current (ILM); (7)Positive VCE (ON) Temperature co-efficient; (8)Ultra fast soft Recovery Co-Pak Diode; (9)Tight parameter distribution; (10)Lead Free Package.
Diagrams
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 IRGP4063DPBF |
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