Product Summary

The IRL3803STRLPBF is a HEXFET Power MOSFET. Fifth Generation HEXFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRL3803STRLPBF is well known for, provides the designerwith an extremely efficient and reliable device for use in a wide variety of applications. The device is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL3803STRLPBF provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.

Parametrics

IRL3803STRLPBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V, @ TC = 25℃, ID: 140A; (2)Continuous Drain Current, VGS @ 10V, @ TC = 100℃, ID: 98 A; (3)Pulsed Drain Current, IDM: 470A; (4)Power Dissipation, @TA = 25℃, PD: 3.8W; (5)Power Dissipation, @TC = 25℃, PD: 200W; (6)Linear Derating Factor: 1.3 W/℃; (7)Gate-to-Source Voltage, VGS: ±16 V; (8)Single pulse avalanche energy, EAS: 610mJ; (9)Avalanche current, IAR: 71A; (10)Peak Diode Recovery, dv/dt: 5V/ns; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (12)Soldering Temperature, for 10 seconds(1.6mm from case): 300℃.

Features

IRL3803STRLPBF features: (1)Logic-Level Gate Drive; (2)Advanced Process Technology; (3)Surface Mount (IRL3803S); (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.

Diagrams

IRL3803STRLPBF circuit diagram

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