Product Summary

The IRLML5203TRPBF is a power MOSFET. The IRLML5203TRPBF from International Rectifier utilizes advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry’s smallest footprint.

Parametrics

IRLML5203TRPBF absolute maximum ratings: (1)Drain- Source Voltage, VDS: -30 V; (2)Continuous Drain Current, VGS @ -10V, ID @ TA = 25℃: -3.0; (3)Continuous Drain Current, VGS @ -10V, ID @ TA= 70℃: -2.4 A; (4)Pulsed Drain Current, IDM: -24; (5)Power Dissipation, PD @TA = 25℃: 1.25; (6)Power Dissipation, PD @TA = 70℃: 0.80; (7)Linear Derating Factor: 10 mW/℃; (8)Gate-to-Source Voltage, VGS: ± 20 V; (9)Junction and Storage Temperature Range, TJ, TSTG: -55 to + 150℃.

Features

IRLML5203TRPBF features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)Surface Mount; (4)Available in Tape & Reel; (5)Low Gate Charge.

Diagrams

IRLML5203TRPBF circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRLML5203TRPBF
IRLML5203TRPBF
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MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl
Data Sheet
0-1: $0.34
1-25: $0.19
25-100: $0.12
100-250: $0.11
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