Product Summary

The LTC1154CS8#TR is a single high-side gate driver allows using low cost N-channel FETs for high-side switching applications. An internal charge pump boosts the gate drive voltage above the positive rail, fully enhancing an N-channel MOS switch with no external components. Micropower operation, with 8μA operating current, allows use in virtually all systems with maximum efficiency. The LTC1154CS8#TR included on chio is programmable over-current sensing. A time delay can be added to prevent false triggering on high in-rush current loads. An active high shutown input is also provided and interfces directly to a standard PTC thermstor for thermal shutdown. An open-drain output is provided to control multiple switches in banks. The LTC1154CS8#TR is availble in 8-pin SOIC package.

Parametrics

LTC1154CS8#TR absolute maximum ratings: (1)Supply voltage: 22V; (2)Input voltage: (VS + 0.3 V) to (GND - 0.3 V); (3)Enable input voltage: (VS + 0.3V) to (GND - 0.3V); (4)Gate voltage: (VS + 24V) to (GND - 0.3V); (5)Status output voltage: 15V; (6)Current (any pin): 50mA; (7)Operting temperature: 0℃ to 70℃; (8)Storage temperature range: -65℃ to 150℃; (9)lead temperture (soldering, 10 sec.): 300℃.

Features

LTC1154CS8#TR features: (1)fully enhances N-channel power MOSFETs; (2)8μA IQ standby current; (3)85μA IQ on current; (4)no external charge pump capacitors; (5)4.5V to 18V supply range; (6)short-circuit protection; (7)thermal shutdown via PTC thermistor; (8)status output indicates shutdown; (9)available in 8-pin SOIC.

Diagrams

LTC1154CS8#TR block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
LTC1154CS8#TR
LTC1154CS8#TR


IC DRIVER MOSF HI SIDE SGL 8SOIC

Data Sheet

0-5000: $1.23
LTC1154CS8#TRPBF
LTC1154CS8#TRPBF


IC MOSFET DRIVER HIGH-SIDE 8SOIC

Data Sheet

0-2500: $1.23