(Hong Kong)
Product Summary
The MJ11033G is a high-current complementary silicon power transistor. The MJ11033G is for use as output devices in complementary general purpose amplifier applications.
Parametrics
MJ11033G absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 120Vdc; (2)Collector.Base Voltage, VCBO: 120Vdc; (3)Emitter-Base Voltage, VEBO: 5.0 Vdc; (4)Collector Current - Continuous, IC: 50Adc; Peak, IC: 100Adc; (5)Base Current- Continuous, IB: 2.0 Adc; (6)Total Power Dissipation @ TC = 25℃, PD: 300W; Derate Above 25℃ @ TC = 100℃, PD: 1.71W/℃; (7)Operating and Storage Junction Temperature Range, TJ, Tstg: -55 to +200℃.
Features
MJ11033G features: (1)High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc; hFE = 400 (Min) @ IC = 50 Adc; (2)Curves to 100 A (Pulsed); (3)Diode Protection to Rated IC; (4)Monolithic Construction with Built-In Base-Emitter Shunt Resistor; (5)Junction Temperature to +200℃; (6)Pb-Free Packages are Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 MJ11033G |
ON Semiconductor |
Transistors Darlington 50A 120V Bipolar Power PNP |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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MJ11033G |
ON Semiconductor |
Transistors Darlington 50A 120V Bipolar Power PNP |
Data Sheet |
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MJ11029G |
ON Semiconductor |
Transistors Darlington 50A 60V Bipolar Power PNP |
Data Sheet |
Negotiable |
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MJ11031 |
Other |
|
Data Sheet |
Negotiable |
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MJ11020 |
Other |
|
Data Sheet |
Negotiable |
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MJ11030 |
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TRANS DARL NPN 50A 90V TO-3 |
Data Sheet |
Negotiable |
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MJ11022 |
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TRANS DARL NPN 15A 250V TO-3 |
Data Sheet |
Negotiable |
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