Product Summary

The MJ11033G is a high-current complementary silicon power transistor. The MJ11033G is for use as output devices in complementary general purpose amplifier applications.

Parametrics

MJ11033G absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 120Vdc; (2)Collector.Base Voltage, VCBO: 120Vdc; (3)Emitter-Base Voltage, VEBO: 5.0 Vdc; (4)Collector Current - Continuous, IC: 50Adc; Peak, IC: 100Adc; (5)Base Current- Continuous, IB: 2.0 Adc; (6)Total Power Dissipation @ TC = 25℃, PD: 300W; Derate Above 25℃ @ TC = 100℃, PD: 1.71W/℃; (7)Operating and Storage Junction Temperature Range, TJ, Tstg: -55 to +200℃.

Features

MJ11033G features: (1)High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc; hFE = 400 (Min) @ IC = 50 Adc; (2)Curves to 100 A (Pulsed); (3)Diode Protection to Rated IC; (4)Monolithic Construction with Built-In Base-Emitter Shunt Resistor; (5)Junction Temperature to +200℃; (6)Pb-Free Packages are Available.

Diagrams

MJ11033G circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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MJ11033G
ON Semiconductor
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Data Sheet
0-1: $5.14
1-25: $4.26
25-100: $3.73
100-500: $3.32
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(USD)		 Quantity
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