Product Summary
The MURF860G is a super fast recovery silicon rectifier.
Parametrics
MURF860G absolute maximum ratings: (1)Peak Repetitive Reverse Voltage, VRRM: 600V; Working Peak Reverse Voltage, VRWM: 600V; DC Blocking Voltage, VR: 600V; (2)RMS Reverse Voltage, VR(RMS): 420V; (3)Average Rectified Output Current, @TC = 105℃, IO: 8A; (4)Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method), IFSM: 125A; (5)Forward Voltage, @IF = 8.0A, VFM: 1.7 V; (6)Peak Reverse Current, @TA = 25℃, IRM: 10μA; At Rated DC Blocking Voltage @TA = 125℃, IRM: 400μA; (7)Reverse Recovery Time, trr: 50 nS; (8)Typical Junction Capacitance, Cj: 50 pF; (9)Operating and Storage Temperature Range, Tj, TSTG: -65 to +150℃.
Features
MURF860G features: (1)Glass Passivated Die Construction; (2)Super-Fast Switching; (3)Low Forward Voltage Drop; (4)Low Reverse Leakage Current; (5)High Surge Current Capability; (6)Plastic Material has UL Flammability; (7)Classification 94V-O.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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MURF860G |
ON Semiconductor |
Rectifiers 8A 600V UFR TO-220FP |
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MURF10005 |
GeneSiC Semiconductor |
Rectifiers SI S-FST RECOV TO244 50-600V 100A 50P/35R |
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MURF10005R |
GeneSiC Semiconductor |
Rectifiers SI S-FST RECOV TO244 50-600V 100A 50P/35R |
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MURF10010R |
GeneSiC Semiconductor |
Rectifiers SI S-FST RECOV TO244 50-600V 100A100P/70R |
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MURF10020 |
GeneSiC Semiconductor |
Rectifiers SI S-FST RECOV TO244 50-600V100A200P/140R |
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MURF10020R |
GeneSiC Semiconductor |
Rectifiers SI S-FST RECOV TO244 50-600V100A200P/140R |
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MURF10040 |
GeneSiC Semiconductor |
Rectifiers SI S-FST REC TO244AB 50-600V100A400P/280R |
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